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PD - 91503D
IRFP150N
HEXFET ? Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
V DSS = 100V
R DS(on) = 0.036 W ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
S
TO-247AC
I D = 42A
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
42
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
30
140
160
1.1
± 20
420
22
16
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
0.95
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
–––
40
°C/W
www.irf.com
1
07/15/02
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